Method of producing a semiconductor laser by implanting impurities which suppress disordering

ABSTRACT

A semiconductor laser device including a substrate containing a groove through which the laser light is emitted, a first layer disposed between the substrate and an active layer including a superlattice region opposite the groove and having the same conductivity type as the region in the sides walls of the groove and a disordered region in the first layer adjacent the superlattice of a different conductivity type from that of the superlattice region for confining current flow from the substrate to the active layer. A method of producing the semiconductor laser device includes implanting impurity ions which change the conductivity type but suppress the disordering of the superlattice region after annealing. The ions are implanted through the groove and produce the desired conductivity type region in the side walls of the groove.

This application is a division of application Ser. No. 07/492,838, filedMar. 13, 1990, now U.S. Pat. No. 5,034,954.

FIELD OF THE INVENTION

The present invention relates to a surface light emitting typesemiconductor laser device and a production method thereof and, moreparticularly, to a laser having a low threshold current and achievingfundamental mode oscillation.

BACKGROUND OF THE INVENTION

In recent years, as a key device for high speed parallel opticalinformation processing surface light emitting type semiconductor laserdevices, which emit laser light perpendicular to the substrate, havebeen advanced.

FIG. 5 shows, in cross-section, a surface light emitting typesemiconductor laser device having an AlAs/AlGaAs multilayer reflectionmirror, disclosed in "Monthly Report of Science", vol. 41, No. 11, pp.910 to 913, by Professor Iga of the Tokyo Institute of Technology. InFIG. 5, 1 is an n type GaAs substrate. An n type Al₀.3 Ga₀.7 As etchstop layer 2 is disposed on the substrate 1. An n type multilayer film 3is disposed on the etch stop layer 2. This multilayer film 3 comprisestwenty pairs of AlAs and Al₀.1 Ga₀.9 As layers, where the thicknesses ofthe respective layers are to: ##EQU1## For example, when the wavelengthis 880 nm, the AlAs layer is 741 angstroms thick and the Al₀.1 Ga₀.9 Aslayer is 625 angstroms thick. A p type GaAs active layer 4 is disposedon the multilayer film 3. An active region 31 is disposed at the centerof active layer 4. A p type Al₀.3 Ga₀.7 As cladding layer 5 is disposedon the active layer 4. A p type GaAs contact layer 6 is disposed on aportion of the cladding layer 5. A SiN insulating film 7 is disposed onthe cladding layer 5 and a circular SiN insulating film 7b is disposedon a portion of the contact layer 6. A p side electrode 9a is disposedon the insulating films 7 and 7b, and an n side electrode 10a isdisposed on the rear surface of substrate 1. Reference numeral 8 denotesa circular mesa groove. Reference numerals 26a and 26b denote crystalsurfaces constituting a pair of resonator facets.

This surface light emitting type laser device will operate as follows.

Holes and electrons which are injected into the device from p sideelectrode 9a and n side electrode 10a are effectively confined in theactive layer 4 by the heterojunction barrier between the GaAs activelayer 4 and the Al₀.3 Ga₀.7 As cladding layer 5 and the heterojunctionbarrier between the GaAs active layer 4 and the multilayer film 3, andrecombine to generate light having a wavelength corresponding to theenergy band gap of the active layer 4. The generated light increases asthe current level is increased. When the current reaches a certain value(threshold value), the gain exceeds the loss and produces laseroscillation and light is emitted from the cavity facet 26a. In order tolower the threshold value, it is necessary to reduce the loss. In orderto reduce the loss, a method of increasing the reflectances of theresonator facets 26a and 26b is considered. In this prior art laserdevice, the AlGaAs/AlAs multilayer film 3 and the circular SiN film 7bare provided to increase the reflectances of the resonator facets.Herein, the thickness of SiN film 7b is set to 1000 to 1900 angstroms.

In the prior art surface light emitting type laser device of such aconstruction, reduction of threshold value is attempted by utilizing themultilayer film 3 and the SiN film 7b. However, since there is noconfinement structure for confining the carriers to the active region31, the carriers injected from the substrate side electrode 10a (in thisdevice, electrons), are dispersed as shown in FIG. 7. A and reactivecurrent which does not contribute to the oscillation is generated,whereby the threshold current is likely to increase. In addition, sincethe reflectance of the multilayer film 3 is approximately the same forthe light of different oscillation modes, mode control is difficult.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a surface lightemitting type semiconductor laser device having a low threshold currentand capable of obtaining a fundamental mode oscillation.

It is another object of the present invention to provide a productionmethod for such a device.

Other objects and advantages of the present invention will becomeapparent from the detailed description given hereafter; it should beunderstood, however, that the detailed description and specificembodiment are given by way of illustration only, since various changesand modifications within the spirit and scope of the invention willbecome apparent to those skilled in the art from this detaileddescription.

According to a first aspect of the present invention, a semiconductorlaser device includes a superlattice layer disposed between an activelayer and a cavity facet at the substrate side at a circular mesagroove. The groove provides a current path and has a high reflectancefor the a laser light. A disordered layer disposed outside the groovebetween the active layer and the substrate blocks current flow and has alow reflectance for the laser light. Therefore, the dispersion ofcarriers injected from the substrate side electrode is suppressed,thereby lowering the threshold current. Furthermore, since thedisordered layer has a reflectance lower than that of the superlatticelayer, the reflectance of higher order oscillation mode light, which hasa high light intensity distribution at the periphery of the activeregion, is lower than the reflectance of the fundamental oscillationmode light, which has a high light intensity distribution at the centerof the active region. The laser device is not likely to oscillate at thehigher order mode, thereby controlling the oscillation mode.

According to another aspect of the present invention, a method ofproducing a semiconductor laser device includes successively epitaxiallygrowing a first or second conductivity type etching stopping layer, afirst conductivity type superlattice layer, a second conductivity typecladding layer, an active layer, and a first conductivity type claddinglayer on a first conductivity type substrate, producing a currentconfinement structure at the side of the first conductivity typecladding layer, etching a groove that reaches the etching stopping layerat a region of the substrate opposite the current confinement structureimplanting dopant impurity ions that suppress the disordering of thesuperlattice layer during annealing and are activated to a secondconductivity type by annealing, from the side of the substrate where thegroove is produced, so that the ions reach the second conductivity typecladding layer in the groove and remain in the substrate said grooveside walls, and disordering the superlattice layer at a region where theimpurity ions are not implanted. Therefore, a laser structure has asuperlattice region which becomes a current path and a disordered regionsurrounding the superlattice region to block a current flow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a surface light emitting typesemiconductor laser device according to a first embodiment of thepresent invention;

FIGS. 2(a) and 2(b) are diagrams showing a process for producing thesurface light emitting type laser device of FIG. 1;

FIG. 3 is a cross-sectional view showing a surface light emitting typelaser device according to a second embodiment of the present invention;

FIG. 4 is a cross-sectional view showing a surface light emitting typelaser device according to a third embodiment of the present invention;

FIG. 5 is a cross-sectional view showing an example of a prior artsurface light emitting type laser device;

FIG. 6 is diagram showing a current flow in the first embodiment of thepresent invention; and

FIG. 7 is diagram showing a current flow in the prior art surface lightemitting type laser device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

An embodiment of the present invention will be described in detail withreference to the drawings.

FIG. 1 shows, in cross-section, a surface light emitting typesemiconductor laser device according to a first embodiment of thepresent invention. In FIG. 1, reference numeral 11 denotes a highresistance n type GaAs substrate. An n type Al₀.4 Ga₀.6 As etchingstopping layer 12 0.3 microns thick is disposed on the substrate 11. A ptype superlattice layer 19 comprising fifty pairs of AlAs and Al₀.1Ga₀.9 As layers is disposed on the etch stop layer 12. Herein, thethickness of AlAs layer t₁ is 90 angstroms and the thickness of Al₀.1Ga₀.9 As layer t₂ is 160 angstroms, where the refractive index of theAlAs layer of thickness t₁ is smaller than the refractive index of theAl₀.1 Ga₀.9 As layer of thickness t₂. An n type Al₀.4 Ga₀.6 As layer 20,produced by disordering part of the superlattice layer 19, is disposedon the etching stopping layer 12. A p type Al₀.4 Ga₀.6 As cladding layer21 0.265 microns thick (wavelength/refractive index) is disposed on thelayer 20 including the superlattice layer 19. A p type GaAs active layer14 of 2 microns thickness is disposed on the cladding layer 21. Anactive region 31 is produced at the center of the active layer 14. An ntype Al₀.4 Ga₀.6 As cladding layer 15 1 micron thick is disposed on theactive layer 14. An n type GaAs contact layer 16 is disposed on aportion of the cladding layer 15. A SiN insulating film 7 is disposed onthe cladding layer 15, and a circular SiN insulating film 7b 10 micronsin diameter, which also functions as reflection layer, is disposed on aportion of the contact layer 6. An n side electrode 10b is disposed onthe insulating films 7 and 7b, and a p side electrode 9b is disposed onthe rear surface of substrate 11. Reference numeral 8 denotes a circularmesa groove 20 microns in diameter. Reference numeral 18 denotes a ptype impurity diffusion region in which the diffusion front in thecircular mesa groove 8 extends into the p type Al₀.4 Ga₀.6 As claddinglayer 21. Reference numerals 26a and 26b denote crystal surfacescomprising a pair of resonator facets. The superlattice layer 19adjacent the p type cladding layer 21 is an AlAs layer.

A production method of this laser device will be described.

FIGS. 2(a) and 2(b) are cross-sectional views showing a method forproducing the surface light emitting type semiconductor laser device ofFIG. 1.

First of all, as shown in FIG. 2(a), an etching stopping layer 12, an ntype AlGaAs/AlAs superlattice layer 13 containing silicon as a dopant, ap type cladding layer 21, a p type active layer 14, an n type claddinglayer 15, and an n type contact layer 16 are successively grown on ahigh resistance n type GaAs substrate 11. Subsequently, all but alimited portion of the n type contact layer 16 and part of the n typecladding layer 15 are removed to confine current flow. Thereafter, thesubstrate 11 is etched to produce a circular mesa groove 8. The etchingis limited by etching stopping layer 12 to avoid damage to thesuperlattice layer 13.

Next, as shown in FIG. 2(b), Be ions (p type dopants) are implanted intothe surface including the circular mesa groove 8. Thereafter, thestructure is annealed to produce the p type impurity diffusion region 18of FIG. 1. Herein, silicon promotes the disordering of the superlatticelayer during annealing, but be suppresses disordering. Accordingly,after the annealing, the region in which Be ions are implanted becomes ap type and remains as the AlGaAs/AlAs superlattice region 19 and theregion in which Be ions are not implanted becomes the n type AlGaAsdisordered layer 20.

The device will operate as follows.

When carriers are injected into the laser device from the p sideelectrode 9b and the n side electrode 10b, the current path of thecarriers which are injected from the substrate side electrode 9b (inthis embodiment, holes) are confined in the p type AlGaAs/AlAssuperlattice layer 19 by the n type disordered layer 20, as shown inFIG. 6. That is, a current confinement structure is realized not onlyfor electrons but also for hole. Electron flow is confined by theinsulating film 7. Hole flow is confined to path by the p type impuritydiffusion region 18 and by the n type disordered layer 20 therebyreducing the threshold current. Furthermore, the reflectance of lightproduced at the active region 31 is high at the AlGaAs/AlAs superlatticelayer 19 but low at the disordered layer 20. The light which hastransitted the disordered layer 20 is absorbed by the GaAs substrate 11.Accordingly, the reflectance of the fundamental oscillation mode light,which has a large electric field at the center of the active region 31,is high and the laser is likely to oscillate at this mode. However, thereflectance of the higher order oscillation mode light, which has alarge electric field at the periphery of the active region 31, is lowand laser oscillation is not likely at the higher order mode. From theabove-described mechanism, the oscillation can be controlled toward thefundamental mode in this embodiment.

In the above-illustrated embodiment, Si is selected as the impurity forpromoting disordering and Be is selected as the impurity for suppressingdisordering, but other combinations of impurities may be employed.

While in the above-illustrated embodiment the etching stopping layer 12is n type, it may be p type.

FIG. 3 shows, in cross-section, a structure of a laser device accordingto a second embodiment of the present invention. In FIG. 3, the samereference numerals denote the same or corresponding portions as thoseshown in FIG. 1. In this second embodiment, the p type Al₀.4 Ga₀.6 Ascladding layer 21, which is disposed on the active layer 14 in the firstembodiment, is replaced by a p type AlGaAs/AlAs superlattice layer 22contain Be dopant ions.

The production process of this second embodiment is the same as that ofthe first embodiment except for that the Be doped p type AlGaAs/AlAssuperlattice layer 22 remains as a superlattice structure, even afterthe annealing. Therefore, the reflectance of the peripheral region ofthe active region is increased as compared with the first embodiment.However, since the reflectance increases with the thickness of thesuperlattice layer, i.e., as the number of layers increases, thereflectance of the central portion of the active region, where thesuperlattice layer 19 is disposed on the superlattice layer 22, ishigher than elsewhere, and a mode selecting function is achieved as inthe first embodiment.

FIG. 4 shows, in cross-section, a structure of a laser device accordingto a third embodiment of the present invention. In FIG. 4, the samereference numerals denote the same or corresponding portions as thoseshown in FIG. 1. In this third embodiment, the p type Al₀.4 Ga₀.6 Ascladding layer 21, which is disposed on the active layer 14 in the firstembodiment, is replaced by a p type AlGaAs/AlAs superlattice layer 23containing zinc (which promotes disordering). Reference numeral 24denotes a p type AlGaAs disordered layer which is produced when the ptype AlGaAs/AlAs superlattice layer 23 is disordered by annealing.

The production process of this third embodiment is the same as that ofthe first embodiment except that the zinc doped p type AlGaAs/AlAssuperlattice layer 23 disposed in place of the AlGaAs cladding layer 21is disordered except where Be ions are implanted. The layer 23 exhibitsalmost the same function as the AlGaAs cladding layer 21, therebyresulting in the same effects as in the first embodiment.

While in the above-illustrated first to third embodiments AlGaAsmaterial is employed, AlGaInP or InGaAsP may be employed.

As is evident from the foregoing description, according to the presentinvention, a superlattice layer current path which has a highreflectance is disposed adjacent the circular mesa groove and between anactive layer and an etching stopping layer, and a current blockingdisordered layer having a low reflectance is disposed beyond thecircular mesa groove portion. Therefore, a semiconductor laser devicehaving a low threshold current and oscillating in the fundamental modewith a high light intensity distribution at the central portion of theactive layer, is obtained.

According to a further aspect of the present invention, impurity ionswhich suppress the disordering of the superlattice and are activated toproduce second conductivity type conductivity after annealing areimplanted from the first conductivity type substrate side where a grooveis disposed so that the ions reach the second conductivity type claddinglayer on the active layer at the groove portion and remain in thesubstrate. Therefore, a laser structure having a superlattice layerregion as a current path and a disordered region surrounding thesuperlattice layer to block current is easily realized.

What is claimed is:
 1. A method of producing a semiconductor laserdevice comprising:successively epitaxially growing an etching stoppinglayer, a first conductivity type superlattice structure, a secondconductivity type cladding layer, an active layer, and a firstconductivity type cladding layer on a substrate; producing a currentconfinement structure in said first conductivity type cladding layer;etching a groove in said substrate reaching said etching stopping layeropposite said current confinement structure; implanting dopant impurityions which suppress disordering of said superlattice structure and areactivated to a second conductivity type by annealing in the superlatticestructure through said groove so that said dopant impurity ions reachsaid second conductivity type cladding layer opposite said groove but donot reach said first conductivity type cladding layer and remain in saidsubstrate at the side walls of said groove; and annealing to disordersaid superlattice structure at a region beyond the groove where saiddopant impurity ions are not implanted and converting the region of thesuperlattice structure opposite the groove to the second conductivitytype.
 2. A method of producing a semiconductor laser device as definedin claim 1 wherein said substrate comprises n type GaAs includinggrowing AlGaAs as said etching stopping layer and AlGaAs/AlAs layerscontaining Si as said superlattice structure.
 3. A method of producing asemiconductor laser device as defined in claim 2 including growing ptype AlGaAs as said second conductivity type cladding layer.
 4. A methodof producing a semiconductor laser device as defined in claim 2including growing a Be doped AlGaAs/AlAs superlattice as said secondconductivity type cladding layer.
 5. A method of producing asemiconductor laser device as defined in claim 2 wherein said secondcladding layer comprises a Zn doped AlGaAs/AlAs superlattice layerincluding disordering the second cladding layer by annealing.
 6. Amethod of producing a semiconductor laser device as defined in claim 2including implanting Be as said dopant impurity ions.